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AP25G10GD Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

Part # AP25G10GD
Description  100V NP-Channel Enhancement Mode MOSFET
PDF  10 Pages
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Manufacturer  APME [A POWER MICROELECTRONICS]
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AP25G10GD Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP25G10GD
100V N+P-Channel Enhancement Mode MOSFET
AP25G10GD RVE1.0
永源微電子科技有限公司
Description
The AP25G10GD uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS =100V ID =25A
RDS(ON) < 100mΩ @ VGS=10V （Type：72mΩ）
VDS = -100V ID =-23.8A
RDS(ON) < 100mΩ @ VGS=-10V （Type：85mΩ）
Application
BLDC
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP25G10GD
TO-252-4L
AP25G10GD XXX YYYY
2500
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
N-Ch
P-Ch
Units
VDS
Drain-Source Voltage
100
-100
V
VGS
Gate-Source Voltage
±20
±20
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V1
25
-23.8
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V1
15.9
-14.5
A
IDM
Pulsed Drain Current2
78.5
-68.4
A
EAS
Single Pulse Avalanche Energy3
128
147.2
mJ
IAS
Avalanche Current
17
16
A
PD@TC=25℃
Total Power Dissipation4
23
21.3
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
RθJA
Thermal Resistance Junction-Ambient 1
62.5
℃
/W
RθJC
Thermal Resistance Junction-Case1
5.4
℃
/W


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