AP30G04GD

40V N+P-Channel Enhancement Mode MOSFET

AP30G04D REV1.0

永源微電子科技有限公司

Electrical Characteristics (TC=25℃unless otherwise noted)

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=-250uA

-40

-45

---

V

RDS(ON)

Static Drain-Source On-Resistance2

VGS=-10V , ID=-15A

---

24

30

mΩ

VGS=-4.5V , ID=-10A

---

30

42

VGS(th)

Gate Threshold Voltage

VGS=VDS , ID =-250uA

-1.0

-1.6

-2.5

V

△

VGS(th)

VGS(th) Temperature Coefficient

---

4.32

---

mV/℃

IDSS

Drain-Source Leakage Current

VDS=-40V,VGS=0V,TJ=25℃

---

---

1

uA

VDS=-40V,VGS=0V,TJ=55℃

---

---

5

IGSS

Gate-Source Leakage Current

VGS=±20V , VDS=0V

---

---

±100

nA

gfs

Forward Transconductance

VDS=-5V , ID=-8A

---

12.6

---

S

Rg

Gate Resistance

VDS=0V , VGS=0V , f=1MHz

---

13

16

Ω

Qg

Total Gate Charge (-4.5V)

VDS=-20V , VGS=-4.5V ,

ID=-12A

---

9

---

nC

Qgs

Gate-Source Charge

---

2.54

---

Qgd

Gate-Drain Charge

---

3.1

---

Td(on)

Turn-On Delay Time

VDD=-15V ,VGS=-10V

RG=3.3Ω,ID=-1A

---

19.2

---

ns

Tr

Rise Time

---

12.8

---

Td(off)

Turn-Off Delay Time

---

48.6

---

Tf

Fall Time

---

4.6

---

Ciss

Input Capacitance

VDS=-15V,VGS=0V, f=1MHz

---

1004

---

pF

Coss

Output Capacitance

---

108

---

Crss

Reverse Transfer Capacitance

---

80

---

IS

Continuous Source Current1,5

VG=VD=0V , Force Current

---

---

-20

A

ISM

Pulsed Source Current2,5

---

---

-40

A

VSD

Diode Forward Voltage2

VGS=0V, IS=-1A,TJ=25℃

---

---

-1.2

V

Note :

1

、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2

、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3

、The EAS data shows Max. rating . The test condition is VDD=-32V,VGS=-10V,L=-0.1mH,IAS=-28A

4

、The power dissipation is limited by 175℃ junction temperature

5

、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.