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AP30G04NF Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

Part # AP30G04NF
Description  40V NP-Channel Enhancement Mode MOSFET
PDF  10 Pages
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Manufacturer  APME [A POWER MICROELECTRONICS]
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AP30G04NF Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP30G04NF
40V N+P-Channel Enhancement Mode MOSFET
AP30G04NF REV1.0
永源微電子科技有限公司
Description
The AP30G04NF uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS =40V ID =38A
RDS(ON) < 10mΩ @ VGS=10V （Type：8.0mΩ）
VDS = -40V ID =-35A
RDS(ON) < 18mΩ @ VGS=-10V （Type：13mΩ）
Application
BLDC
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP30G04NF
PDFN5X6-8L
AP30G04NF XXX YYYY
5000
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
N-Ch
P-Ch
Units
VDS
Drain-Source Voltage
40
-40
V
VGS
Gate-Source Voltage
±20
±20
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V1
38
-35
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V1
31
-29
A
IDM
Pulsed Drain Current2
144
-129
A
EAS
Single Pulse Avalanche Energy3
128
185
mJ
IAS
Avalanche Current
16
-18
A
PD@TC=25℃
Total Power Dissipation4
48
51.3
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
RθJA
Thermal Resistance Junction-Ambient 1
25
℃/W
RθJC
Thermal Resistance Junction-Case1
2.3
℃/W


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