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RJP60D0DPK Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # RJP60D0DPK
Description  IGBT
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

RJP60D0DPK Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

  RJP60D0DPK Datasheet HTML 1Page - Inchange Semiconductor Company Limited RJP60D0DPK Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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background image
ISG2296
eq RJP60D0DPK
IGBT
www.iscsemi.com
1
DESCRIPTION
· Low Collector to Emitter Saturation Voltage
VCE(sat)= 2.2V(max)@ IC= 22A
· High Ruggedness for Motor Control
· Pb-free Lead Plating and Chip Bonding
APPLICATIONS
· Motor Drive
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Emitter Voltage
600
V
VGE
Gate-Emitter Voltage
±
30
V
IC
Collector
Current-Continu
ous
TC= 25℃
45
A
TC= 100℃
22
A
ICpulse
Pulsed Collector Current, VGE= 15V
90
A
PD
Power Dissipation @TC=25℃
140
W
Tj
Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
0.89
℃
/W


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