AP40P02D

-20V P-Channel Enhancement Mode MOSFET

AP40P02D RVE1.0

永源微電子科技有限公司

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=-250uA

-20

-23

---

V

△BVDSS/△TJ

BVDSS Temperature Coefficient

Reference to 25

℃ , ID=-1mA

---

-0.012

---

V/

℃

RDS(ON)

Static Drain-Source On-Resistance2

VGS=-4.5V , ID=-20A

---

12

20

mΩ

RDS(ON)

Static Drain-Source On-Resistance2

VGS=-2.5V , ID=-10A

---

22

28

VGS(th)

Gate Threshold Voltage

VGS=VDS , ID =-250uA

-0.5

-1.2

V

△VGS(th)

VGS(th) Temperature Coefficient

---

2.94

---

mV/

℃

IDSS

Drain-Source Leakage Current

VDS=-20V , VGS=0V , TJ=25

℃

---

---

1

uA

IGSS

Gate-Source Leakage Current

VGS=±12V , VDS=0V

---

---

±100

nA

Qg

Total Gate Charge (-4.5V)

VDS=-10V , VGS=-4.5V , ID=-6A

---

15.3

---

nC

Qgs

Gate-Source Charge

---

2.2

---

Qgd

Gate-Drain Charge

---

4.4

---

Td(on)

Turn-On Delay Time

VDD=-10V , VGS=-4.5V ,

RG=3.3Ω, ID=-10A

---

10

---

ns

Tr

Rise Time

---

31

---

Td(off)

Turn-Off Delay Time

---

28

---

Tf

Fall Time

---

8

---

Ciss

Input Capacitance

VDS=-10V , VGS=0V , f=1MHz

---

2000

---

pF

Coss

Output Capacitance

---

242

---

Crss

Reverse Transfer Capacitance

---

231

---

IS

Continuous Source Current1,4

VG=VD=0V , Force Current

---

---

-20

A

ISM

Pulsed Source Current2,4

---

---

-48

A

VSD

Diode Forward Voltage2

VGS=0V , IS=-1A , TJ=25

℃

---

---

-1.2

V

Note :

1、The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3、The power dissipation is limited by 150℃ junction temperature

4、The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation.

-

0.6