RM4 - RM4Z

SILICON RECTIFIER DIODES

PRV : 100 - 400 Volts

Io : 1.7 Ampere

FEATURES :

* High current capability

* High surge current capability

* High reliability

* Low reverse current

* Low forward voltage drop

* Pb / RoHS Free

MECHANICAL DATA :

* Case : DO-201AD Molded plastic

* Epoxy : UL94V-O rate flame retardant

* Lead : Axial lead solderable per MIL-STD-202,

Method 208 guaranteed

* Polarity : Color band denotes cathode end

* Mounting position : Any

* Weight :

1.21 grams

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25

°C ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

SYMBOL

RM4Y

RM4Z

RM4

UNIT

Maximum Reverse Voltage

VRM

100

200

400

V

Maximum Peak Reverse Surge Voltage

VRSM

150

250

450

V

Maximum Average Forward Current

IF(AV)

1.7 (3.0 A is with Heatsink)

A

Maximum Peak Forward Surge Current

Half-cycle Sine wave, 50 Hz, Single Shot

Maximum Forward Voltage at IF = 3.0 A

VF

0.95

V

Maximum Reverse Current

Ta = 25

°C

IR

10

μA

at VR = VRmax.

Ta = 150

°C

IR(H)

50

μA

Junction Temperature Range

TJ

- 40 to + 150

°C

Storage Temperature Range

TSTG

- 40 to + 150

°C

Page 1 of 2

Rev. 03: October 8, 2012

RATING

IFSM

200

A

0.208 (5.30)

0.188 (4.80)

DO - 201AD

0.374 (9.50)

0.283 (7.20)

0.050 (1.28)

0.048 (1.22)

Dimensions in inches and ( millimeters )

1.00 (25.4)

MIN.

1.00 (25.4)

MIN.

IATF 0113686

SGS TH07/1033

TH09/2479

TH97/2478

www.eicsemi.com