STB4NK60Z datasheet(3/20 Pages) STMICROELECTRONICS

3 / 20 page

STB4NK60Zx, STD4NK60Zx, STP4NK60Z, STP4NK60ZFP

Electrical ratings

3/20

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-220 - D²PAK

DPAK-IPAK-I²PAK

TO-220FP

VDS

Drain-source voltage (VGS = 0)

600

VGS

Gate- source voltage

± 30

Drain current (continuous) at TC = 25 °C

(1)

Limited only by maximum temperature allowed

Drain current (continuous) at TC = 100 °C

2.5

2.5 (1)

IDM

(2)

Pulse width limited by safe operating area

Drain current (pulsed)

16 (1)

PTOT

Total dissipation at TC = 25 °C

Derating factor

0.56

0.2

W/°C

VESD(G-S) Gate source ESD(HBM-C=100 pF, R=1.5 kΩ)

3000

dv/dt (3)

ISD ≤ 4 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, TJ ≤ TJMAX.

Peak diode recovery voltage slope

4.5

V/ns

VISO

Insulation withstand voltage (RMS) from all

three leads to external heat sink

(t=1 s; TC = 25 °C)

2500

Tstg

Storage temperature

-55 to 150

°C

Max operating junction temperature

150

°C

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

TO-220

D²PAK

I²PAK

DPAK

IPAK

TO-220FP

Rthj-case

Thermal resistance junction-case max

1.78

°C/W

Rthj-amb

Thermal resistance junction-ambient max

62.5

100

62.5

°C/W

Maximum lead temperature for soldering

purpose

300

°C

Table 4.

Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not-repetitive

(pulse width limited by Tj Max)

EAS

Single pulse avalanche energy

(starting TJ = 25 °C, ID=IAR, VDD= 50 V)

120

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