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AP70H03NF Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

Part # AP70H03NF
Description  30V NN-Channel Enhancement Mode MOSFET
PDF  7 Pages
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Manufacturer  APME [A POWER MICROELECTRONICS]
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AP70H03NF Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP70H03NF
30V N+N-Channel Enhancement Mode MOSFET
AP70H03NF REV1.0
永源微電子科技有限公司
Description
The AP70H03NF uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS = 30V ID =70A
RDS(ON) < 5.0mΩ @ VGS=10V（Type：3.8mΩ）
Application
Battery protection
Load switch
Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP70H03NF
PDFN5*6-8L
AP70H03NF XXX YYYY
5000
Absolute Maximum Ratings (TC=25
℃unless otherwise noted)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
±20
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V1
70
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V1
51
A
IDM
Pulsed Drain Current2
210
A
EAS
Single Pulse Avalanche Energy3
325
mJ
IAS
Avalanche Current
48
A
PD@TC=25℃
Total Power Dissipation4
59
W
PD@TA=25℃
Total Power Dissipation4
2
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
RθJA
Thermal Resistance Junction-Ambient 1
25
℃/W
RθJC
Thermal Resistance Junction-Case1
2.1
℃/W


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