AP70H06NF datasheet(1/7 Pages) APME

Part #	AP70H06NF

Description	60V N-Channel Enhancement Mode MOSFET

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Manufacturer	APME [A POWER MICROELECTRONICS]

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AP70H06NF

60V N-Channel Enhancement Mode MOSFET

AP70H06NF RVE1.0

永源微電子科技有限公司

Description

The AP70H06NF uses advanced APM-SGTⅠtechnology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = 60V ID =70A

RDS(ON) < 10mΩ @ VGS=10V (Type：7.5mΩ)

Application

Battery protection

Load switch

Uninterruptible power supply

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP70H06NF

PDFN5*6-8L

AP70H06NF XXX YYYY

5000

Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)

Symbol

Parameter

Value

Unit

VDS

Drain source voltage

60

V

VGS

Gate source voltage

±20

V

ID@TA=25

℃

Continuous drain current

70

A

ID@TA=70

℃

Continuous drain current

45

A

IDM

Pulsed drain current

280

A

PD@TA=25

℃

Power dissipation

60

W

EAS

Single pulsed avalanche energy

30

mJ

TSTG

Storage Temperature Range

-55 to 150

℃

Tj

Operation and storage temperature

-55 to 150

℃

RθJC

Thermal resistance, junction-case

2.1

°C/W

RθJA

Thermal resistance, junction-ambient5)

25

°C/W

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AP70H06NF Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

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