AP70N02D

20V N-Channel Enhancement Mode MOSFET

AP70N02D REV1.0

永源微電子科技有限公司

Electrical Characteristics (TC=25℃unless otherwise noted)

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-Source Breakdown Voltage

ID = 250µA, VGS = 0V

20

21

-

V

IDSS

Zero Gate Voltage Drain Current

VDS = 20V, VGS = 0V

-

-

1.0

µA

IGSS

Gate-Body Leakage Current

VDS = 0V, VGS = ±12V

-

-

±100

nA

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 250µA

0.5

0.8

1.1

V

RDS(ON)

Static Drain-Source ON

VGS = 4.5V, ID = 30A

-

3.1

4.0

mΩ

VGS = 2.5V, ID = 20A

-

3.9

5.0

mΩ

Ciss

Input Capacitance

VGS=0V, VDS=10V, f=1MHz

-

3174

-

pF

Coss

Output Capacitance

-

396

-

pF

Crss

Reverse Transfer Capacitance

-

365

-

pF

Qg

Total Gate Charge

VGS=0 to 4.5V VDD=10V,

ID=30A

-

36

-

nC

Qgs

Gate Source Charge

-

6

-

nC

Qgd

Gate Drain("Miller") Charge

-

10

-

nC

td(on)

Turn-On DelayTime

VGS = 4.5V, VDD = 10V

ID= 30A, RGEN = 3Ω

-

13

-

ns

tr

Turn-On Rise Time

-

31

-

ns

td(off)

Turn-Off DelayTime

-

73

-

ns

tf

Turn-Off Fall Time

-

92

-

ns

IS

Maximum Continuous Drain to Source Diode Forward Current

-

-

70

A

ISM

Maximum Pulsed Drain to Source Diode Forward Current

-

-

300

A

VSD

Drain to Source Diode Forward Voltage

VGS = 0V, IS = 30A

-

-

1.2

V

trr

Body Diode Reverse Recovery Time

IF=20A,di/dt=100A/μs

-

13

-

ns

Qrr

Body Diode Reverse Recovery Charge

-

4

-

nC

Note :

1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width .The EAS data shows Max. rating .

3、The EAS condition: TJ=25℃, VDD=16V, VG=4.5V, RG=25Ω, L=0.1mH, IAS=38A

4、The power dissipation is limited by 175℃ junction temperature

5、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.