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AP70N10F Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

Part # AP70N10F
Description  100V N-Channel Enhancement Mode MOSFET
PDF  7 Pages
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Manufacturer  APME [A POWER MICROELECTRONICS]
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AP70N10F Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP70N10FIPIT
100V N-Channel Enhancement Mode MOSFET
AP70N10F/P/T RVE1.1
永源微電子科技有限公司
Description
The AP70N10P/T uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS = 100V ID =70A
RDS(ON) < 25mΩ@ VGS=10V （Type：18mΩ）
Application
Automative lighting
Load switch
Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP70N10F
TO220F-3L
AP70N10F XXX YYYY
1000
AP70N10P
TO220-3L
AP70N10P XXX YYYY
1000
AP70N10T
TO263-3L
AP70N10T XXX YYYY
800
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
100
V
VGS
Gate-Source Voltage
±20
V
ID@TC=25
℃
Drain Current, VGS @ 10V
70
A
ID@TC=100
℃
Drain Current, VGS @ 10V
56
A
IDM
Pulsed Drain Current1
210
A
EAS
Single Pulse Avalanche Energy
110
mJ
PD@TC=25
℃
Total Power Dissipation
90
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
RθJA
Maximum Thermal Resistance, Junctionambient
62.5
℃/W
RθJC
Maximum Thermal Resistance, Junction-case
1.4
℃/W


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