AP70N12HD datasheet(1/7 Pages) APME

Part #	AP70N12HD

Description	120V N-Channel Enhancement Mode MOSFET

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Manufacturer	APME [A POWER MICROELECTRONICS]

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AP70N12HD

120V N-Channel Enhancement Mode MOSFET

AP70N12HD RVE1.0

永源微電子科技有限公司

Description

The AP70N12HD uses advanced SGT II technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 10V. This

device is suitable for use as a

Battery protection or in other Switching application.

General Features

VDS = 120V ID =70A

RDS(ON) < 12mΩ @ VGS=10V （Type：10mΩ）

Application

Mobile phone fast charging

Brushless motor

Home appliance control board

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP70N12HD

TO-252-3L

AP70N12HD XXX YYYY

2500

Absolute Maximum Ratings (TC=25

℃unless otherwise noted)

Symbol

Parameter

Value

Unit

VDS

Drain source voltage

120

V

VGS

Gate source voltage

±20

V

ID@TA=25℃

Continuous drain current1), TC=25 ℃

70

A

ID@TA=70℃

Continuous drain current1), TC=75 ℃

35

A

ID, pulse

Pulsed drain current2), TC=25 ℃

150

A

PD

Power dissipation3), TC=25 ℃

140

W

EAS

Single pulsed avalanche energy4)

53.8

mJ

Tstg，Tj

Operation and storage temperature

-55 to 150

℃

RθJC

Thermal resistance, junction-case

0.89

℃

/W

RθJA

Thermal resistance, junction-ambient5)

62.5

℃

/W

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AP70N12HD Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

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