AP70N12NF

120V N-Channel Enhancement Mode MOSFET

AP70N12NF RVE1.0

永源微電子科技有限公司

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Test condition

Min

Typ

Max

Unit

BVDSS

Drain-source breakdown voltage

VGS=0 V, ID=250 μA

120

125

V

VGS(th)

Gate threshold voltage

VDS=VGS, ID=250 μA

1.2

1.8

2.5

V

RDS(ON)

Drain-source on-state resistance

VGS=10 V, ID=30 A

10

mΩ

RDS(ON)

Drain-source on-state resistance

VGS=4.5 V, ID=20 A

mΩ

IGSS

Gate-source leakage current

VGS=±20 V

±100

nA

IDSS

Drain-source leakage current

VDS=120 V, VGS=0 V

1

uA

Ciss

Input capacitance

VGS=0 V,

VDS=50 V,

ƒ=100 kHz

2640

pF

Coss

Output capacitance

330

pF

Crss

Reverse transfer capacitance

11

pF

td(on)

Turn-on delay time

VGS=10 V,

VDS=50 V,

RG=2 Ω,

ID=25 A

22

ns

tr

Rise time

10

ns

td(off)

Turn-off delay time

85

ns

tf

Fall time

112

ns

Qg

Total gate charge

ID=25 A,

VDS=50 V,

VGS=10 V

33

nC

Qgs

Gate-source charge

5.6

nC

Qgd

Gate-drain charge

7.2

nC

Vplateau

Gate plateau voltage

3.1

V

IS

Diode forward current

VGS<Vth

50

A

ISP

Pulsed source current

VGS<Vth

150

A

VSD

Diode forward voltage

IS=12 A, VGS=0 V

1.3

V

trr

Reverse recovery time

IS=25 A, di/dt=100 A/μs

62.3

ns

Qrr

Reverse recovery charge

135.3

nC

Irrm

Peak reverse recovery current

3.5

A

Note :

1、The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width .The EAS data shows Max. rating .

3、The power dissipation is limited by 175℃ junction temperature

4、EAS condition: TJ=25℃, VDD= 50V, VG= 10V, RG=25Ω, L=0.5mH, IAS= 30A

5、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.

15

18

13