AP75N10NF

100V N-Channel Enhancement Mode MOSFET

AP75N10NF REV1.0

永源微電子科技有限公司

Electrical Characteristics@Tj=25oC(unless otherwise specified)

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

V(BR)DSS

Drain-Source Breakdown Voltage

VGS=0V, ID=250μA

100

-

-

V

IDSS

Zero Gate Voltage Drain Current

VDS=100V, VGS=0V,

-

-

1.0

μA

IGSS

Gate to Body Leakage Current

VDS=0V, VGS=±25V

-

-

±100

nA

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=250μA

2

3

4

V

RDS(on)

Static Drain-Source on-Resistance

VGS=10V, ID=30A

-

11

15

mΩ

Ciss

Input Capacitance

VDS=25V, VGS=0V,

f=1.0MHz

-

5000

-

pF

Coss

Output Capacitance

-

250

-

pF

Crss

Reverse Transfer Capacitance

-

170

-

pF

Qg

Total Gate Charge

VDD=30V, ID=30A,

VGS=10V

-

94

-

nC

Qgs

Gate-Source Charge

-

16

-

nC

Qgd

Gate-Drain(“Miller”) Charge

-

24

-

nC

td(on)

Turn-on Delay Time

VDD=30V,ID=2A,

RL=15Ω,RGEN=2.5Ω,

VGS=10V

-

15

-

ns

tr

Turn-on Rise Time

-

11

-

ns

td(off)

Turn-off Delay Time

-

52

-

ns

tf

Turn-off Fall Time

-

13

-

ns

IS

Maximum Continuous Drain to Source Diode Forward Current

-

-

75

A

ISM

Maximum Pulsed Drain to Source Diode Forward Current

-

-

236

A

VSD

Drain to Source Diode Forward Voltage

VGS=0V, IS=30A

-

-

1.2

V

trr

Body Diode Reverse Recovery Time

IF=28A, di/dt=100A/μs

-

33

-

ns

Qrr

Body Diode Reverse Recovery Charge

-

54

-

nC

Note :

1、The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width

≦ 300us , duty cycle ≦ 2%

3、The EAS data shows Max. rating . The test condition is VDD=72V,VGS=10V,L=0.1mH,IAS=40A

4、The power dissipation is limited by 150

℃ junction temperature

5、The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation.