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AP85N03BDF Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

Part # AP85N03BDF
Description  30V N-Channel Enhancement Mode MOSFET
PDF  7 Pages
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Manufacturer  APME [A POWER MICROELECTRONICS]
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AP85N03BDF Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP85N03BDF
30V N-Channel Enhancement Mode MOSFET
AP85N03BDF REV1.0
永源微電子科技有限公司
Description
The AP85N03BDF uses advanced APM-SGT V technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS = 30V ID =85A
RDS(ON) < 2.1mΩ @ VGS=10V （Type：1.78mΩ）
Application
Buck
Boost
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP85N03BDF
PDFN3*3-8L
AP85N03BDF XXX YYYY
5000
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
Max.
Units
VDSS
Drain-Source Voltage
30
V
VGSS
Gate-Source Voltage
±20
V
ID@TC=25
℃
Continuous Drain Current, VGS @ 10V1
85
A
ID@TC=100
℃
Continuous Drain Current, VGS @ 10V1
56
A
IDM
Pulsed Drain Current
344
A
EAS
Single Pulsed Avalanche Energy
144
mJ
IAS
Avalanche Current
28
A
PD@TC=25
℃
Power Dissipation
28
W
TJ TSTG
Operating Junction Temperature Range
-55 to 150
°C
RθJA
Thermal Resistance Junction-Ambient 1
48
°C/W
RθJC
Thermal Resistance, Junction to Case
1.4
℃/W


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