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M29F016B Datasheet(PDF) 1 Page - STMicroelectronics |
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M29F016B Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 22 page ![]() 1/22 March 2000 M29F016B 16 Mbit (2Mb x8, Uniform Block) Single Supply Flash Memory s SINGLE 5V ±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS s ACCESS TIME: 55ns s PROGRAMMING TIME –8 µs by Byte typical s 32 UNIFORM 64 Kbyte MEMORY BLOCKS s PROGRAM/ERASE CONTROLLER – Embedded Byte Program algorithm – Embedded Multi-Block/Chip Erase algorithm – Status Register Polling and Toggle Bits – Ready/Busy Output Pin s ERASE SUSPEND and RESUME MODES – Read and Program another Block during Erase Suspend s TEMPORARY BLOCK UNPROTECTION MODE s UNLOCK BYPASS PROGRAM COMMAND – Faster Production/Batch Programming s LOW POWER CONSUMPTION – Standby and Automatic Standby s 100,000 PROGRAM/ERASE CYCLES per BLOCK s 20 YEARS DATA RETENTION – Defectivity below 1 ppm/year s ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Device Code: ADh TSOP40 (N) 10 x 20mm SO44 (M) 44 1 Figure 1. Logic Diagram AI02964 21 A0-A20 W DQ0-DQ7 VCC M29F016B E VSS 8 G RP RB |
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