BAV200, BAV201, BAV202, BAV203

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Vishay Semiconductors

Rev. 2.0, 12-Jun-2024

2

Document Number: 85544

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TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

Fig. 1 - Reverse Current vs. Junction Temperature

Fig. 2 - Forward Current vs. Forward Voltage, IF vs. VF

Fig. 3 - Differential Forward Resistance vs. Forward Current

Fig. 4 - Typical Capacitance vs. Reverse Voltage, CD vs. VR

ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

PART

SYMBOL

MIN.

TYP.

MAX.

UNIT

Forward voltage

IF = 100 mA

VF

1V

Reverse current

VR = 50 V

BAV200

IR

100

nA

VR = 100 V

BAV201

IR

100

nA

VR = 150 V

BAV202

IR

100

nA

VR = 200 V

BAV203

IR

100

nA

Tj = 100 °C, VR = 50 V

BAV200

IR

15

μA

Tj = 100 °C, VR = 100 V

BAV201

IR

15

μA

Tj = 100 °C, VR = 150 V

BAV202

IR

15

μA

Tj = 100 °C, VR = 200 V

BAV203

IR

15

μA

Breakdown voltage

IR = 100 μA, tp/T = 0.01,

tp = 0.3 ms

BAV200

V(BR)

60

V

BAV201

V(BR)

120

V

BAV202

V(BR)

200

V

BAV203

V(BR)

250

V

Diode capacitance

VR = 0, f = 1 MHz

CD

1.5

pF

Differential forward resistance

IF = 10 mA

rf

5

Ω

Reverse recovery time

IF = IR = 30 mA, iR = 3 mA,

RL = 100

Ω

trr

50

ns

0

40

80

120

160

0.01

0.1

1

10

1000

Tj - Junction Temperature (°C)

200

94 9084

100

Scattering Limit

V

R = VRRM

10

100

1000

10000

0.001

0.01

0.1

1

10

100

1000

0

0.2

0.4

0.6

0.8

1

Axis Title

VF (V)

Tj = 150 °C

Tj = 75 °C

Tj = 25 °C

0.1

1

10

1

10

100

1000

IF - Forward Current (mA)

100

94 9089

T

j = 25 °C

10

100

1000

10000

0

0.5

1

1.5

0.01

0.1

1

10

100

Axis Title

VR (V)

f = 1 MHz