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AP100N03Y Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS |
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AP100N03Y Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS |
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1 / 8 page  AP100N03Y 30V N-Channel Enhancement Mode MOSFET AP100N03Y RVE1.0 永源微電子科技有限公司 Description The AP100N03Y uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS=30V ID =100A RDS(ON) < 6.5mΩ @ VGS=10V （Type：4.5mΩ） Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP100N03Y TO-251L-3L AP100N03Y XXXX YYYY 4000 AP100N03Y TO-251S-3L AP100N03Y XXXX YYYY 4000 Absolute Maximum Ratings (TC=25 ℃unless otherwise noted) Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ± 20 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V1 100 A ID@TC=75℃ Continuous Drain Current, VGS @ 10V1 55 A IDM Pulsed Drain Current2 240 A EAS Single Pulse Avalanche Energy3 56 mJ IAS Avalanche Current 15 A PD@TC=25℃ Total Power Dissipation4 46 W PD@TA=25℃ Total Power Dissipation4 2.72 W TSTG Storage Temperature Range -55 to 175 ℃ TJ Operating Junction Temperature Range -55 to 175 ℃ RθJA Thermal Resistance Junction-Ambient 1 62 ℃ /W RθJC Thermal Resistance Junction-Case1 2.72 ℃ /W |
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