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AP100N07D Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

Part # AP100N07D
Description  68V N-Channel Enhancement Mode MOSFET
PDF  7 Pages
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Manufacturer  APME [A POWER MICROELECTRONICS]
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AP100N07D Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP100N07D
68V N-Channel Enhancement Mode MOSFET
AP100N07D REV1.0
永源微電子科技有限公司
Description
The AP100N07D uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 10V. This
device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS = 68V ID =100A
RDS(ON) < 6.8mΩ @ VGS=10V （Type：5.8mΩ）
Application
Battery protection
Load switch
Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP100N07D
TO-252-3L
AP100N07D XXX YYYY
2500
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Value
Unit
VDS
Drain source voltage
68
V
VGS
Gate source voltage
±20
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V1
100
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V1
53
A
IDM
Pulsed drain current2)
360
A
IAS
Diode forward current
29
A
PD
Power dissipation
123
W
EAS
Single pulsed avalanche energy)
206
mJ
Tstg
，Tj
Operation and storage temperature
-55 to 150
℃
RθJC
Thermal resistance, junction-case
1.0
℃/W
RθJA
Thermal resistance, junction-ambient4)
62.5
℃/W


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