AP100N07PIT

68V N-Channel Enhancement Mode MOSFET

AP100N07P/T REV1.0

永源微電子科技有限公司

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-Source Breakdown Voltage

ID = 250mA, VGS = 0V

68

-

-

V

IDSS

Zero Gate Voltage Drain Current

VDS = 70V, VGS = 0V

-

-

1.0

mA

IGSS

Gate-Body Leakage Current

VDS = 0V, VGS = ±20V

-

-

±100

nA

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 250mA

2.0

3.0

4.0

V

RDS(ON)

Static Drain-Source ON-Resistance(4)

VGS = 10V, ID = 30A

-

5.8

6.8

mΩ

Rg

Gate Resistance

f = 1MHz

-

0.9

-

W

Ciss

Input Capacitance

VGS = 0V, VDS = 35V, f =

1MHz

-

5463

-

pF

Coss

Output Capacitance

-

250

-

pF

Crss

Reverse Transfer Capacitance

-

199

-

pF

Qg

Total Gate Charge

VGS = 0 to 10V VDS = 35V,

ID = 30A

-

94

-

nC

Qgs

Gate Source Charge

-

30

-

nC

Qgd

Gate Drain("Miller") Charge

-

24

-

nC

td(on)

Turn-On DelayTime

VGS = 10V, VDD = 35V

ID= 30A, RGEN = 3W

-

20

-

ns

tr

Turn-On Rise Time

-

30

-

ns

td(off)

Turn-Off DelayTime

-

45

-

ns

tf

Turn-Off Fall Time

-

14

-

ns

IS

Maximum Continuous Body Diode Forward Current

-

-

100

A

ISM

Maximum Pulsed Body Diode Forward Current

-

-

336

A

VSD

Body Diode Forward Voltage

VGS = 0V, IS = 30A

-

1.2

V

trr

Body Diode Reverse Recovery Time

IF = 30A, di/dt = 100A/us

21

30

41

ns

Qrr

Body Diode Reverse Recovery Charge

-

41.8

-

nC

Note :

1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width .The EAS data shows Max. rating .

3、The test cond≦ 300us

duty cycle ≦ 2%, duty cycle ition is TJ =25℃, VDD =35V, VG =10V, R G =25Ω, L=0.5mH, IAS =29A

4、The power dissipation is limited by 175℃ junction temperature

5、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.