AP100N08NF

85V N-Channel Enhancement Mode MOSFET

AP100N08NF REV1.0

永源微電子科技有限公司

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-Source Breakdown Voltage

ID = 250mA, VGS = 0V

85

95

-

V

IDSS

Zero Gate Voltage Drain Current

VDS = 85V, VGS = 0V

-

-

1.0

mA

IGSS

Gate-Body Leakage Current

VDS = 0V, VGS = ±20V

-

-

±100

nA

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 250mA

2.0

2.9

4.0

V

RDS(ON)

Static Drain-Source ON-Resistance(4)

VGS = 10V, ID = 20A

-

2.9

4.0

mΩ

Rg

Gate Resistance

f = 1MHz

-

2.1

-

Ω

Ciss

Input Capacitance

VGS = 0V, VDS = 50V,

f = 1MHz

-

6142

-

pF

Coss

Output Capacitance

-

1073

-

pF

Crss

Reverse Transfer Capacitance

-

27

-

pF

Qg

Total Gate Charge

VGS = 0 to 10V

VDS = 50V, ID = 20A

-

88

-

nC

Qgs

Gate Source Charge

-

31

-

nC

Qgd

Gate Drain("Miller") Charge

-

18

-

nC

td(on)

Turn-On DelayTime

VGS = 10V, VDD = 50V

ID= 20A, RGEN = 6.2W

-

29

-

ns

tr

Turn-On Rise Time

-

41

-

ns

td(off)

Turn-Off DelayTime

-

69

-

ns

tf

Turn-Off Fall Time

-

44

-

ns

IS

Maximum Continuous Body Diode Forward Current

-

-

175

A

ISM

Maximum Pulsed Body Diode Forward Current

-

-

699

A

VSD

Body Diode Forward Voltage

VGS = 0V, IS = 20A

-

1.2

V

trr

Body Diode Reverse Recovery Time

IF = 20A, di/dt = 100A/us

60

84

113

ns

Qrr

Body Diode Reverse Recovery Charge

-

240

-

nC

Note :

1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width .The EAS data shows Max. rating .

3、The test cond≦ 300us duty cycle ≦ 2%, duty cycle ition is VDD=64VGS=10V,L=0.1mH,IAS=53.8A

4、The power dissipation is limited by 175℃ junction temperature

5、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.