AP85N03NF datasheet(1/7 Pages) APME

Part #	AP85N03NF

Description	30V N-Channel Enhancement Mode MOSFET

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Manufacturer	APME [A POWER MICROELECTRONICS]

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AP85N03NF

30V N-Channel Enhancement Mode MOSFET

AP85N03NF RVE1.1

永源微電子科技有限公司

Description

The AP85N03NF uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a

Battery protection or in other Switching application.

General Features

VDS = 30V ID =85A

RDS(ON) < 2.8mΩ @ VGS=10V（Type：2.1mΩ）

Application

Battery protection

Load switch

Uninterruptible power supply

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP85N03NF

PDFN5*6-8L

AP85N03NF XXX YYYY

5000

Absolute Maximum Ratings (TC=25

℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

30

V

VGS

Gate-Source Voltage

±20

V

ID@TC=25

℃

Continuous Drain Current, VGS @ 10V1

85

A

ID@TC=100

℃

Continuous Drain Current, VGS @ 10V1

68

A

IDM

Pulsed Drain Current2

216

A

EAS

Single Pulse Avalanche Energy3

650

mJ

IAS

Avalanche Current

53.8

A

PD@TC=25

℃

Total Power Dissipation4

45

W

PD@TA=25

℃

Total Power Dissipation4

5

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-Ambient 1

25

℃/W

RθJC

Thermal Resistance Junction-Case1

2.8

℃/W

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AP85N03NF Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

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