AP85N04DF

40V N-Channel Enhancement Mode MOSFET

AP85N04DF REV1.0

永源微電子科技有限公司

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-Source Breakdown Voltage

VGS = 0V, ID = 250µA

40

-

-

V

lGSS

Gate-body Leakage Current

VDS = 0V, VGS = ±20V

-

-

±100

nA

IDSS TJ=25°C

Zero Gate Voltage Drain Current

VDS = 40V, VGS = 0V

-

-

1

μA

IDSS TJ=100°C

-

-

100

VGS(th)

Gate-Threshold Voltage

VDS=VGS, ID= 250µA

1.2

1.7

2.2

V

RDS(on)

Drain-Source On-Resistance4

VGS=10V, ID=20A

-

2.1

2.8

mΩ

VGS=4.5V, ID=15A

-

2.8

3.8

gfs

Forward Transconductance4

VDS=10V, ID=20A

-

75

-

S

Ciss

Input Capacitance

VDS=20V, VGS=0V,

f=1MHz

-

2625

-

pF

Coss

Output Capacitance

-

560

-

Crss

Reverse Transfer Capacitance

-

35

-

RG

Gate Resistance

f=1MHz

-

1

-

Ω

Qg

Total Gate Charge

VGS=10V, VDS=20V,

ID=20A

-

42.6

-

nC

Qgs

Gate-Source Charge

-

6.6

-

Qgd

Gate-Drain Charge

-

7.2

-

td(on)

Turn-on Delay Time

VGS=10V, VDD=20V,

RG=3Ω, ID=20A

-

9.8

-

ns

tr

Rise Time

-

8.7

-

td(off)

Turn-off Delay Time

-

30.8

-

tf

Fall Time

-

10.4

-

trr

Body Diode Reverse Recovery Time

IF=20A , dI/dt=100A/μs

-

46

-

ns

Qrr

Body Diode Reverse Recovery Charge

-

18.4

-

nC

VSD

Diode Forward Voltage4

IS=20A, VGS=0V

-

-

1.2

V

IS

Continuous Source Current

TC=25°C

-

-

85

A

Note :

1、The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3、The EAS data shows Max. rating . The test condition is VDD =32V,VGS =10V,L=0.1mH,IAS =54A

4、The power dissipation is limited by 150℃ junction temperature

5、The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation.