AP85N08NF datasheet(1/7 Pages) APME

Part #	AP85N08NF

Description	85V N-Channel Enhancement Mode MOSFET

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Manufacturer	APME [A POWER MICROELECTRONICS]

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AP85N08NF

85V N-Channel Enhancement Mode MOSFET

AP85N08NF REV1.0

永源微電子科技有限公司

Description

The AP85N08NF uses advanced APM-SGT II technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 10V.

This device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = 85V ID =85A

RDS(ON) < 5.8mΩ VGS=10V （Type：4.8mΩ）

Application

Battery protection

Load switch

Uninterruptible power supply

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP85N08NF

PDFN5X6-8L

AP85N08NF XXX YYYY

5000

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

85

V

VGS

Gate-Source Voltage

±20

V

ID@TC=25℃

Continuous Drain Current, VGS @ 10V

100

A

ID@TC=100℃

Continuous Drain Current, VGS @ 10V

86

A

IDM

Pulsed Drain Current

544

A

EAS

Single Pulse Avalanche Energy

434

mJ

PD@TC=25℃

Total Power Dissipation4

166

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-Ambient

0.65

℃

/W

RθJC

Thermal Resistance Junction-Case

62.5

℃

/W

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AP85N08NF Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

AP85N08NF Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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