AP90N02BD datasheet(1/7 Pages) APME

Part #	AP90N02BD

Description	20V N-Channel Enhancement Mode MOSFET

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Manufacturer	APME [A POWER MICROELECTRONICS]

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AP90N02BD

20V N-Channel Enhancement Mode MOSFET

AP90N02BD REV1.0

永源微電子科技有限公司

Description

The AP90N02BD uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 2.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS=20V ID =90A

RDS(ON) < 4.0mΩ @ VGS=10V

（Type：3.1mΩ）

Application

Battery protection

Load switch

Uninterruptible power supply

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP90N02BD

TO-252-3L

AP90N02BD XXXX YYYY

2500

Absolute Maximum Ratings (TC=25

℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

20

V

VGS

Gate-Source Voltage

±

12

V

ID@TC=25℃

Continuous Drain Current, VGS @ 10V1

90

A

ID@TC=75℃

Continuous Drain Current, VGS @ 10V1

40

A

IDM

Pulsed Drain Current2

240

A

EAS

Single Pulse Avalanche Energy3

562

mJ

IAS

Avalanche Current

38

A

PD@TC=25℃

Total Power Dissipation4

57

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-Ambient 1

62

℃

/W

RθJC

Thermal Resistance Junction-Case1

2.63

℃

/W

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AP90N02BD Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

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