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AP90N02D Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS |
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AP90N02D Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS |
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1 / 7 page  AP90N02D 20V N-Channel Enhancement Mode MOSFET AP90N02D RVE1.0 永源微電子科技有限公司 Description The AP90N02D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 20V ID =90A RDS(ON) < 3.5mΩ@ VGS=4.5V (Type：2.8mΩ) Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP90N02D TO-252-3L AP90N02D XXX YYYY 2500 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Max. Units VDSS Drain-Source Voltage 20 V VGSS Gate-Source Voltage ±12 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V1 90 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V1 59 A IDM Pulsed Drain Current note1 360 A EAS Single Pulsed Avalanche Energy note2 110 mJ PD Power Dissipation 81 W RθJC Thermal Resistance, Junction to Case 1.85 ℃ /W TJ, TSTG Operating and Storage Temperature Range -55 to +175 ℃ |
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