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AP90N02NF Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

Part # AP90N02NF
Description  20V N-Channel Enhancement Mode MOSFET
PDF  7 Pages
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Manufacturer  APME [A POWER MICROELECTRONICS]
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AP90N02NF Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP90N02NF
20V N-Channel Enhancement Mode MOSFET
AP90N02NF RVE1.0
永源微電子科技有限公司
Description
The AP90N02NF uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS = 20V ID =90A
RDS(ON) < 2.0mΩ@ VGS=10V (Type：1.6mΩ)
RDS(ON) < 2.5mΩ@ VGS=4.5V (Type：1.9mΩ)
Application
Battery protection
Load switch
Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP90N02NF
PDFN5*6-8L
AP90N02NF XXX YYYY
5000
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
Max.
Units
VDSS
Drain-Source Voltage
20
V
VGSS
Gate-Source Voltage
±12
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V1
90
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V1
48
A
IDM
Pulsed Drain Current note1
270
A
EAS
Single Pulsed Avalanche Energy note2
80
mJ
IAS
Avalanche Current
40
A
PD
Power Dissipation
83
W
RθJA
Thermal Resistance Junction-ambient
25
℃
/W
RθJC
Thermal Resistance, Junction to Case
1.5
℃
/W
TJ, TSTG
Operating and Storage Temperature Range
-55 to +175
℃


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