60V N-Channel Enhancement Mode MOSFET

永源微電子科技有限公司

Description

The AP90N06F uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 10V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = 60V ID =90A

RDS(ON) < 7.0mΩ @ VGS=10V （Type：5.8mΩ）

Application

Battery protection

Load switch

Uninterruptible power supply

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP90N06F

TO-220F-3L

AP90N06F XXX YYYY

1000

Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)

Symbol

Parameter

Value

Unit

VDS

Drain source voltage

60

V

VGS

Gate source voltage

±20

V

ID

Continuous drain current1)

90

A

IDM

Pulsed drain current2)

320

A

IS

Diode forward current

37

A

ISP

Pulsed source current

210

A

PD

Power dissipation

108

W

EAS

Single pulsed avalanche energy)

205.4

mJ

Tstg

，Tj

Operation and storage temperature

-55 to 150

℃

RθJC

Thermal resistance, junction-case

1.4

℃/W

RθJA

Thermal resistance, junction-ambient4)

62

℃/W

AP90N06F

AP90N06F RVE1.0