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AP90N12F Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS |
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AP90N12F Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS |
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1 / 9 page  AP90N12FIPIT 120V N-Channel Enhancement Mode MOSFET AP90N12F/P/T REV1.0 永源微電子科技有限公司 Description The AP90N12F/P/T uses advanced SGT II technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 7.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 120V ID =90A RDS(ON) < 9mΩ @ VGS=10V （Type：7.5mΩ） Application Mobile phone fast charging Brushless motor Home appliance control board Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP90N12F TO-220F-3L AP90N12F XXX YYYY 1000 AP90N12P TO-220-3L AP90N12P XXX YYYY 1000 AP90N12T TO-263-3L AP90N12T XXX YYYY 800 Absolute Maximum Ratings (TC=25 ℃unless otherwise noted) Symbol Parameter Value Unit VDS Drain source voltage 120 V VGS Gate source voltage ±20 V ID@TA=25℃ Continuous drain current1), TC=25 ℃ 90 A ID@TA=70℃ Continuous drain current1), TC=75 ℃ 35 A IDM Pulsed drain current2), TC=25 ℃ 270 A PD Power dissipation3), TC=25 ℃ 160 W EAS Single pulsed avalanche energy4) 125 mJ Tstg，Tj Operation and storage temperature -55 to 150 ℃ RθJC Thermal resistance, junction-case 0.89 ℃ /W RθJA Thermal resistance, junction-ambient5) 25 ℃ /W |
Similar Part No. - AP90N12F |
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Similar Description - AP90N12F |
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