AP90N15NF

150V N-Channel Enhancement Mode MOSFET

AP90N15NF REV1. 1

永源微电子科技有限公司

Electrical Characteristics@Tj=25oC(unless otherwise specified)

Symbol

Parameter

Test condition

Min.

Typ.

Max.

Unit

BVDSS

Drain-source breakdown voltage

VGS=0 V, ID=250 μA

150

167

V

VGS(th)

Gate threshold voltage

VDS=VGS, ID=250 μA

2.0

3.0

4.0

V

RDS(ON)

Drain-source on-state resistance

VGS=10 V, ID=30 A

15

18

mΩ

IGSS

Gate-source leakage current

VGS=20 V

100

nA

VGS=-20 V

-100

IDSS

Drain-source leakage current

VDS=150 V, VGS=0 V

1

μA

RG

Gate resistance

ƒ=1 MHz, Open drain

4

Ω

Ciss

Input capacitance

VGS=0V,

VDS=75V, ƒ=1MHz

2275

pF

Coss

Output capacitance

165

pF

Crss

Reverse transfer capacitance

5.5

pF

td(on)

Turn-on delay time

VGS=10V,

VDS=75 V, RG=2 Ω,

ID=30 A

10

ns

tr

Rise time

29

ns

td(off)

Turn-off delay time

16

ns

tf

Fall time

15

ns

Qg

Total gate charge

VGS=10V,

VDS=75V,

ID=30A

27

nC

Qgs

Gate-source charge

9

nC

Qgd

Gate-drain charge

2

nC

trr

Reverse recovery time

VR=75V,

IS=20A, di/dt=100A/μs

90

ns

Qrr

Reverse recovery charge

234

nC

Irrm

Peak reverse recovery current

210

A

VSD

Diode forward voltage

IS=30A, VGS=0 V

1.2

V

Note :

1、The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width

≦ 300us , duty cycle ≦ 2%

3、The EAS data shows Max. rating . The test condition is VDD=72V,VGS=10V,L=0.1mH,IAS=40A

4、The power dissipation is limited by 150

℃ junction temperature

5、The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation.