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P0803BDG Datasheet(PDF) 1 Page - Wuxi U-NIKC Semiconductor CO.,LTD |
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P0803BDG Datasheet(HTML) 1 Page - Wuxi U-NIKC Semiconductor CO.,LTD |
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1 / 5 page ![]() P0803BDG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS TO-252 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. IAS Pulsed Drain Current 1 Avalanche Current 2.5 TC= 25 °C mJ 20 ID TC= 25 °C 30V Continuous Drain Current TC= 100 °C PARAMETERS/TEST CONDITIONS RDS(ON) Drain-Source Voltage 9.2mΩ @V GS = 10V 60A Power Dissipation Tj, Tstg THERMAL RESISTANCE TC= 100°C Junction & Storage Temperature Range L=0.1mH EAS RqJC W Lead Temperature (1/16” from case for 10 sec.) TL 275 SYMBOL 60 LIMITS 120 38 60 VDS IDM ID 35 30 50 A -55 to 150 MAXIMUM UNITS Gate-Source Voltage VGS ±20 V Avalanche Energy Junction-to-Ambient RqJA 62.5 °C / W TYPICAL PD SYMBOL Junction-to-Case °C REV 1.0 1 2014/5/6 |
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