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M29F100B Datasheet(PDF) 16 Page - STMicroelectronics |
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M29F100B Datasheet(HTML) 16 Page - STMicroelectronics |
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16 / 30 page  Symbol Alt Parameter M29F100T / M29F100B Unit -70 -90 -120 VCC =5V ± 5% VCC =5V ± 10% VCC =5V ± 10% High Speed Interface Standard Interface Standard Interface Min Max Min Max Min Max tAVAV tWC Address Valid to Next Address Valid 70 90 120 ns tELWL tCS Chip Enable Low to Write Enable Low 000 ns tWLWH tWP Write Enable Low to Write Enable High 35 45 50 ns tDVWH tDS Input Valid to Write Enable High 30 45 50 ns tWHDX tDH Write Enable High to Input Transition 000 ns tWHEH tCH Write Enable High to Chip Enable High 000 ns tWHWL tWPH Write Enable High to Write Enable Low 20 20 20 ns tAVWL tAS Address Valid to Write Enable Low 0 0 0 ns tWLAX tAH Write Enable Low to Address Transition 45 45 50 ns tGHWL Output Enable High to Write Enable Low 000 ns tVCHEL tVCS VCC High to Chip Enable Low 50 50 50 µs tWHGL tOEH Write Enable High to Output Enable Low 000 ns tPHPHH (1,2) tVIDR RP Rise Time to VID 500 500 500 ns tPLPX tRP RP Pulse Width 500 500 500 ns tWHRL (1) tBUSY Program Erase Valid to RB Delay 30 35 50 ns tPHWL (1) tRSP RP High to Write Enable Low 4 4 4 µs Notes: 1. Sample only, not 100% tested. 2. This timing is for Temporary Block Unprotection operation. Table 15. Write AC Characteristics, Write Enable Controlled (TA = 0 to 70 °C, –40 to 85°C or –40 to 125°C) Erase Suspend (ES) Instruction. The Block Erase operation may be suspended by this instruc- tion which consists of writing the command B0h without any specific address. No Coded cycles are required. It permits reading of data from another block and programming in another block while an erase operation is in progress. Erase suspend is accepted only during the Block Erase instruction execution. Writing this command during Erase timeout will, in addition to suspending the erase, terminate the timeout. The Toggle bit DQ6 stops togglingwhen the P/E.C. is suspended.The Toggle bits will stop toggling between 0.1 µs and 15µs after the Erase Suspend (ES) command has been writ- ten. The device will then automatically be set to Read Memory Array mode. When erase is sus- pended, a Read from blocks being erased will output DQ2 toggling and DQ6 at ’1’. A Read from 16/30 M29F100T, M29F100B |
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