AP140N06NF datasheet(1/7 Pages) APME

Part #	AP140N06NF

Description	60V N-Channel Enhancement Mode MOSFET

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Manufacturer	APME [A POWER MICROELECTRONICS]

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AP140N06NF

60V N-Channel Enhancement Mode MOSFET

AP140N06NF REV1.0

永源微電子科技有限公司

Description

The AP140N06NFuses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 10V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = 60V ID =140A

RDS(ON) < 4.5mΩ @ VGS=10V （Type：3.5mΩ）

Application

Battery protection

Load switch

Uninterruptible power supply

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP140N06NF

PDFN5X6-8L

AP140N06NF XXX YYYY

5000

Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)

Symbol

Parameter

Value

Unit

VDS

Drain source voltage

60

V

VGS

Gate source voltage

±20

V

ID@TC=25℃

Continuous Drain Current, VGS @ 10V1

140

A

ID@TC=100℃

Continuous Drain Current, VGS @ 10V1

79

A

IDM

Pulsed drain current2)

500

A

IAS

Diode forward current

55

A

PD

Power dissipation

150

W

EAS

Single pulsed avalanche energy)

225

mJ

Tstg

，Tj

Operation and storage temperature

-55 to 150

℃

RθJC

Thermal resistance, junction-case

0.83

℃/W

RθJA

Thermal resistance, junction-ambient4)

25

℃/W

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AP140N06NF Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

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