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AP140N09P Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

Part # AP140N09P
Description  95V N-Channel Enhancement Mode MOSFET
PDF  6 Pages
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Manufacturer  APME [A POWER MICROELECTRONICS]
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AP140N09P Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP140N09PIT
95V N-Channel Enhancement Mode MOSFET
AP120N09PIT RVE1.0
Description
The AP140N09P/T uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 10V.
This device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS =95V ID =140A
RDS(ON) < 5.3mΩ VGS=10V （Type：4.3mΩ）
Application
Battery protection
Load switch
Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP140N09P
TO-220-3L
AP140N09P XXX YYYY
1000
AP140N09T
TO-263-3L
AP140N09T XXX YYYY
800
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
95
V
VGS
Gate-Source Voltage
±20
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
140
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
93
A
IDM
Pulsed Drain Current
480
A
EAS
Single Pulse Avalanche Energy
650
mJ
IAS
Avalanche Current
45.4
A
Ptot @TC=25℃
Power dissipation
223
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
RθJA
Thermal Resistance Junction-Ambient
0.64
℃
/W
RθJC
Thermal Resistance Junction-Case
56
℃
/W
永源微電子科技有限公司


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