AP140N15PIT

150V N-Channel Enhancement Mode MOSFET

AP140N15P/T REV1.0

永源微電子科技有限公司

Electrical Characteristics (TC=25℃unless otherwise noted)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-Source Breakdown Voltage

VGS = 0V, ID = 250µA

150

172

-

V

lGSS

Gate-body Leakage Current

VDS = 0V, VGS = ±20V

-

-

±100

nA

IDSS@TJ=25°C

Zero Gate Voltage Drain Current

VDS = 150V, VGS = 0V

1

μA

IDSS@TJ=100°C

100

VGS(th)

Gate-Threshold Voltage

VDS = VGS, ID = 250µA

2.0

3.2

4.5

V

RDS(on)

Drain-Source On-Resistance4

VGS = 10V, ID = 20A

-

7.4

9.0

mΩ

gfs

Forward Transconductance4

VDS = 5V, ID = 20A

-

60

-

S

Ciss

Input Capacitance

VDS = 75V, VGS =0V, f

=1MHz

-

2181

-

pF

Coss

Output Capacitance

-

363

-

Crss

Reverse Transfer Capacitance

-

7.9

-

Rg

Gate Resistance

f = 1MHz

-

2.5

-

Ω

Qg

Total Gate Charge

VGS = 10V, VDS = 75V,

ID= 20A

-

30

-

nC

Qgs

Gate-Source Charge

-

7.5

-

Qgd

Gate-Drain Charge

-

6.5

-

td(on)

Turn-On Delay Time

VGS =10V, VDD = 75V,

RG = 3Ω, ID= 20A

-

12.5

-

ns

tr

Rise Time

-

24

-

td(off)

Turn-Off Delay Time

-

30

-

tf

Fall Time

-

26

-

trr

Body Diode Reverse Recovery Time

IF=20A, dl/dt=100A/μs

-

99

-

ns

Qrr

Body Diode Reverse Recovery

Charge

-

318

-

nC

VSD

Diode Forward Voltage4

IF = 20A, VGS = 0V

-

-

1.2

V

IS

Continuous Source Current

TC=25°C

-

-

140

A

Notes:

1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width ≤ 300us , duty cycle ≤ 2%

3、The EAS data shows Max. rating . The test condition is VDD=50V, VGS=10V, L=0.5mH, IAS=65A

4、The power dissipation is limited by 150°C junction temperature

5、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.