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M29KW064E Datasheet(PDF) 1 Page - STMicroelectronics |
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M29KW064E Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 30 page ![]() 1/30 PRODUCT PREVIEW July 2002 This is preliminary information on a new product now in development. Details are subject to change without notice. M29KW064E 64 Mbit (4Mb x16, Uniform Block) 3V Supply LightFlash™ Memory FEATURES SUMMARY s SUPPLY VOLTAGE –VCC = 2.7V to 3.6V for Read –VPP = 11.4V to 12.6V for Program and Erase s ACCESS TIME: 90, 110ns s PROGRAMMING TIME – 9µs per Word typical – Multiple Word Programming Option (8s typical Chip Program) s ERASE TIME – 41s typical factory Chip Erase s UNIFORM BLOCKS – 32 blocks of 2 Mbits s PROGRAM/ERASE CONTROLLER – Embedded Word Program algorithms s 10,000 PROGRAM/ERASE CYCLES per BLOCK s ELECTRONIC SIGNATURE – Manufacturer Code: 0020h – Device Code : 88AFh Figure 1. Packages TSOP48 (N) 12 x 20mm TFBGA48 (ZA) 6 x 9mm FBGA |
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