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AP150P01NF Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

Part # AP150P01NF
Description  -18V P-Channel Enhancement Mode MOSFET
PDF  7 Pages
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Manufacturer  APME [A POWER MICROELECTRONICS]
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AP150P01NF Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP150P01NF
-18V P-Channel Enhancement Mode MOSFET
AP150P01NF REV1.0
永源微电子科技有限公司
Description
The AP150P01NF uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS = -18V ID =-150A
RDS(ON) < 2.0mΩ @ VGS=-4.5V (Type：1.7mΩ)
RDS(ON) < 3.2mΩ @ VGS=-2.5V (Type：2.7mΩ)
Application
Battery protection
Load switch
Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP150P01NF
PDFN5*6-8L
AP150P01NF XXX YYYY
5000
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
-18
V
VGS
Gate-Source Voltage
±12
V
ID@TC=25℃
Continuous Drain Current, VGS @ -10V1
-150
A
ID@TC=100℃
Continuous Drain Current, VGS @ -10V1
-76
A
IDM
Pulsed Drain Current2
450
A
EAS
Single Pulse Avalanche Energy3
450
mJ
IAS
Avalanche Current
-50
A
PD@TC=25℃
Total Power Dissipation4
104
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
RθJA
Thermal Resistance Junction-Ambient 1
15
℃
/W
RθJC
Thermal Resistance Junction-Case1
0.9
℃
/W


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