M29W008AT datasheet(2/30 Pages) STMICROELECTRONICS

2 / 30 page

M29W008AT, M29W008AB

2/30

Figure 2. TSOP Connections

VSS

DQ1

DQ2

A11

A17

A14

A15

DQ7

A16

DQ5

DQ3

VCC

DQ4

DQ6

A18

AI02717

M29W008AT

M29W008AB

A12

A13

A19

A10

VCC

DQ0

VSS

Table 1. Signal Names

A0-A19

Address Inputs

DQ0-DQ7

Data Input/Outputs, Command Inputs

Chip Enable

Output Enable

Write Enable

Reset/Block Temporary Unprotect

Ready/Busy Output

VCC

Supply Voltage

VSS

Ground

Not Connected Internally

Organisation

The M29W008A is organised as 1Mb x8. The

memory uses the address inputs A0-A19 and the

Data Input/Outputs DQ0-DQ7. Memory control is

provided by Chip Enable E, Output Enable G and

Write Enable W inputs.

A Reset/Block Temporary Unprotection RP tri-lev-

el input provides a hardware reset when pulled

Low, and when held High (at VID) temporarily un-

protects blocks previously protected allowing them

to be programed and erased. Erase and Program

operations are controlled by an internal Program/

Erase Controller (P/E.C.). Status Register data

output on DQ7 provides a Data Polling signal, and

DQ6 and DQ2 provide Toggle signals to indicate

the state of the P/E.C operations. A Ready/Busy

RB output indicates the completion of the internal

algorithms.

Memory Blocks

The devices feature asymmetrically blocked archi-

tecture providing system memory integration. Both

M29W008AT and M29W008AB devices have an

array of 19 blocks, one Boot Block of 16 Kbytes,

two Parameter Blocks of 8 Kbytes, one Main Block

of 32 Kbytes and fifteen Main Blocks of 64 Kbytes.

The M29W008AT has the Boot Block at the top of

the memory address space and the M29W008AB

locates the Boot Block starting at the bottom. The

memory maps are showed in Tables 3, 4. Each

block can be erased separately, any combination

of blocks can be specified for multi-block erase or

the entire chip may be erased. The Erase opera-

tions are managed automatically by the P/E.C.

DESCRIPTION

The M29W008A is a non-volatile memory that may

be erased electrically at the block or chip level and

programmed in-system on a Byte-by-Byte basis

using only a single 2.7V to 3.6V VCC supply. For

Program and Erase operations the necessary high

voltages are generated internally. The device can

also be programmed in standard programmers.

The array matrix organisation allows each block to

be erased and reprogrammed without affecting

other blocks. Blocks can be protected against pro-

graming and erase on programming equipment,

and temporarily unprotected to make changes in

the application. Each block can be programmed

and erased over 100,000 cycles.

Instructions for Read/Reset, Auto Select for read-

ing the Electronic Signature or Block Protection

status, Programming, Block and Chip Erase,

Erase Suspend and Resume are written to the de-

vice in cycles of commands to a Command Inter-

face using standard microprocessor write timings.

The device is offered in TSOP40 (10 x 20mm)

package.

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