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M29W008B Datasheet(PDF) 24 Page - STMicroelectronics |
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M29W008B Datasheet(HTML) 24 Page - STMicroelectronics |
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24 / 30 page ![]() Sym- bol Parameter M29W008T / M29W008B Unit -90 -100 VCC = 3.0V to 3.6V CL = 30pF VCC = 2.7V to 3.6V CL = 30pF Min Max Min Max tWHQ7V Write Enable High to DQ7 Valid (Program, W Controlled) 10 2400 10 2400 ms Write Enable High to DQ7 Valid (Chip Erase, W Controlled) 1.0 60 1.0 60 sec tEHQ7V Chip Enable High to DQ7 Valid (Program, E Controlled) 10 2400 10 2400 µs Chip Enable High to DQ7 Valid (Chip Erase, E Controlled) 1.0 60 1.0 60 sec tQ7VQV Q7 Valid to Output Valid (Data Polling) 35 40 ns tWHQV Write Enable High to Output Valid (Program) 10 2400 10 2400 µs Write Enable High to Output Valid (Chip Erase) 1.0 60 1.0 60 sec tEHQV Chip Enable High to Output Valid (Program) 10 2400 10 2400 µs Chip Enable High to Output Valid (Chip Erase) 1.0 60 1.0 60 sec Note: 1. All other timings are defined in Read AC Characteristics table. Table 17A. Data Polling and Toggle Bit AC Characteristics (1) (TA = 0 to 70 °C, –20 to 85°C or –40 to 85°C) Sym- bol Parameter M29W008T / M29W008B Unit -120 -150 VCC = 2.7V to 3.6V CL = 100pF VCC = 2.7V to 3.6V CL = 100pF Min Max Min Max tWHQ7V Write Enable High to DQ7 Valid (Program, W Controlled) 10 2400 10 2400 ms Write Enable High to DQ7 Valid (Chip Erase, W Controlled) 1.0 60 1.0 60 sec tEHQ7V Chip Enable High to DQ7 Valid (Program, E Controlled) 10 2400 10 2400 µs Chip Enable High to DQ7 Valid (Chip Erase, E Controlled) 1.0 60 1.0 60 sec tQ7VQV Q7 Valid to Output Valid (Data Polling) 50 55 ns tWHQV Write Enable High to Output Valid (Program) 10 2400 10 2400 µs Write Enable High to Output Valid (Chip Erase) 1.0 60 1.0 60 sec tEHQV Chip Enable High to Output Valid (Program) 10 2400 10 2400 µs Chip Enable High to Output Valid (Chip Erase) 1.0 60 1.0 60 sec Note: 1. All other timings are defined in Read AC Characteristics table. Table 17B. Data Polling and Toggle Bit AC Characteristics (1) (TA = 0 to 70 °C, –20 to 85°C or –40 to 85°C) 24/30 M29W008T, M29W008B |
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