AP280N12MP datasheet(1/7 Pages) APME

Part #	AP280N12MP

Description	120V N-Channel Enhancement Mode MOSFET

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Manufacturer	APME [A POWER MICROELECTRONICS]

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AP280N12MP

120V N-Channel Enhancement Mode MOSFET

AP280N12MP REV1.0

永源微電子科技有限公司

Description

The AP280N12MP uses advanced APM-SGTⅠtechnology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 10V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = 120V （Type：135V） ID =280A

RDS(ON) < 3.6mΩ @ VGS=10V (Type：2.7mΩ)

Application

BMS

UPS

Power Management Switches

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP240N12MP

TO-247-3L

AP240N12MP XXX YYYY

330

Absolute Maximum Ratings (TC=25

℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

120

V

VGS

Gate-Source Voltage

±20

V

ID@TC=25

℃

Continuous Drain Current, VGS @ 10V

280

A

ID@TC=100

℃

Continuous Drain Current, VGS @ 10V

163

A

IDM

Pulsed Drain Current

840

A

EAS

Single Pulse Avalanche Energy

520.2

mJ

IAS

Avalanche Current

45

A

PD@TC=25

℃

Total Power Dissipation4

240

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-Ambient

62

℃/W

RθJC

Thermal Resistance Junction-Case

0.35

℃

/W

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AP280N12MP Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

AP280N12MP Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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