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AP400N08MP Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

Part # AP400N08MP
Description  80V N-Channel Enhancement Mode MOSFET
PDF  7 Pages
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Manufacturer  APME [A POWER MICROELECTRONICS]
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AP400N08MP Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP400N08MP
80V N-Channel Enhancement Mode MOSFET
AP400N08MP REV1.0
永源微電子科技有限公司
Description
The AP400N08MP uses advanced SGT II technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 10V.
This device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS = 80V ID =400A
RDS(ON) < 1.5mΩ VGS=10V （Type：1.2mΩ）
Application
Battery protection
Load switch
Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP400N08MP
TO-247-3L
AP400N08MP XXX YYYY
330
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
80
V
VGS
Gate-Source Voltage
±20
V
ID@TC=25
℃
Continuous Drain Current, VGS @ 10V
400
A
ID@TC=100
℃
Continuous Drain Current, VGS @ 10V
253
A
IDM
Pulsed Drain Current
1600
A
EAS
Single Pulse Avalanche Energy
2258
mJ
PD@TC=25
℃
Total Power Dissipation4
469
W
TSTG
Storage Temperature Range
-55 to 175
℃
TJ
Operating Junction Temperature Range
-55 to 175
℃
RθJA
Thermal Resistance Junction-Ambient
62.5
℃/W
RθJC
Thermal Resistance Junction-Case
0.32
℃
/W


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