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AP2222D Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS |
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AP2222D Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS |
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1 / 7 page  AP2222D 20V N-Channel Enhancement Mode MOSFET AP2222D RVE1.0 永源微電子科技有限公司 Description The AP2222D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS=20V ID=50A RDS(ON) < 10.5m Ω @ VGS=4.5V （Type：8.5mΩ） Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP2222D 2 TO252-3L 2222 XXX YYYY 500 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Max. Units VDSS Drain-Source Voltage 20 V VGSS Gate-Source Voltage ±12 V ID@TA=25℃ Continuous Drain Current, VGS @ 4.5V 50 A ID@TA=70℃ Continuous Drain Current, VGS @ 4.5V 20 A IDM Pulsed Drain Current note1 120 A EAS Single Pulsed Avalanche Energy note2 23 mJ PD@TA=25℃ Power Dissipation 20 W RθJC Thermal Resistance, Junction to Case 7.5 ℃/W TJ, TSTG Operating and Storage Temperature Range ℃ -55 to +150 |
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