AP2300AI datasheet(1/7 Pages) APME

Part #	AP2300AI

Description	20V N-Channel Enhancement Mode MOSFET

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Manufacturer	APME [A POWER MICROELECTRONICS]

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AP2300AI

20V N-Channel Enhancement Mode MOSFET

AP2300AI RVE3.1

永源微電子科技有限公司

Description

The AP2300AI uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 2.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = 20V ID =4.5A

RDS(ON) < 30mΩ @ VGS=4.5V （Type：22mΩ）

Application

Battery protection

Load switch

Uninterruptible power supply

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP2300AI

SOT23L

2300

3000

Absolute Maximum Ratings (TC=25

℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

20

V

VGS

Gate-Source Voltage

±

12

V

ID@TA=25℃

Continuous Drain Current, VGS @ 4.5V1

4.5

A

ID@TA=70℃

Continuous Drain Current, VGS @ 4.5V1

2.8

A

IDM

Pulsed Drain Current2

14.4

A

PD@TA=25℃

Total Power Dissipation3

1

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-ambient 1

125

℃

/W

RθJC

Thermal Resistance Junction-Case1

80

℃

/W

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AP2300AI Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

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