M29W400T datasheet(15/34 Pages) STMICROELECTRONICS

15 / 34 page

Symbol

Alt

Parameter

Test

Condition

M29W400T / M29W400B

Unit

-120

-150

VCC = 2.7V to 3.6V VCC = 2.7V to 3.6V

Min

Max

Min

Max

tAVAV

tRC

Address Valid to Next Address Valid

E= VIL,

G= VIL

120

150

tAVQV

tACC

Address Valid to Output Valid

E= VIL,

G= VIL

120

150

tELQX

(1)

tLZ

Chip Enable Low to Output

Transition

G= VIL

tELQV

(2)

tCE

Chip Enable Low to Output Valid

G = VIL

120

150

tGLQX

(1)

tOLZ

Output Enable Low to Output

Transition

E= VIL

tGLQV

(2)

tOE

Output Enable Low to Output Valid

E = VIL

tEHQX

tOH

Chip Enable High to Output

Transition

G= VIL

tEHQZ

(1)

tHZ

Chip Enable High to Output Hi-Z

G = VIL

tGHQX

tOH

Output Enable High to Output

Transition

E= VIL

tGHQZ

(1)

tDF

Output Enable High to Output Hi-Z

E = VIL

tAXQX

tOH

Address Transition to Output

Transition

E= VIL,

G= VIL

tPLYH

(1,3)

tRRB

tREADY

RP Low to Read Mode

µs

tPHEL

tRH

RP High to Chip Enable Low

tPLPX

tRP

RP Pulse Width

500

tELBL

tELBH

tELFL

tELFH

Chip Enable to BYTE Switching Low

or High

tBLQZ

tFLQZ

BYTE Switching Low to Output

High Z

tBHQV

tFHQV

BYTE Switching High to Output

Valid

Notes: 1. Sampled only, not 100% tested.

2. G may be delayed by up to tELQV -tGLQV after the falling edge of E without increasing tELQV.

3. To be considered only if the Reset pulse is given while the memory is in Erase or Program mode.

Table 14B. Read AC Characteristics

(TA = 0 to 70

°C, –20 to 85°C or –40 to 85°C)

15/34

M29W400T, M29W400B

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