AP3400MI datasheet(1/7 Pages) APME

Part #	AP3400MI

Description	30V N-Channel Enhancement Mode MOSFET

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Manufacturer	APME [A POWER MICROELECTRONICS]

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AP3400MI

30V N-Channel Enhancement Mode MOSFET

AP3400MI RVE3.9

臺灣永源微電子科技有限公司

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP3400MI

X0(XX-YY).

3000

Absolute Maximum Ratings (TC=25

℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

30

V

VGS

Gate-Source Voltage

±

12

V

ID@TA=25℃

Continuous Drain Current

A

ID@TA=70℃

Continuous Drain Current

4.9

A

IDM

Pulsed Drain Current2

20

A

PD@TA=25℃

Total Power Dissipation3

1

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-ambient 1

125

℃

/W

RθJA

Thermal Resistance Junction-Ambient 1 (t

≤10s)

85

℃

/W

SOT-23-3L

Description

The AP3400MI uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 2.5V. This

device is suitable for use as a

Battery protection or in other Switching application.

General Features

VDS = 30V ID =6.2A

RDS(ON) < 25mΩ @ VGS=10V (Type：21m )

Application

Battery protection

Load switch

Uninterruptible power supply

6.2

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AP3400MI Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

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