AP3401CI

-30V P-Channel Enhancement Mode MOSFET

AP3401CI REV1.0

永源微電子科技有限公司

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Test Condition

Min

Typ

Max.

Units

V(BR)DSS

Drain-Source Breakdown Voltage

VGS=0V, ID= -250μA

-30

-33

-

V

IDSS

Zero Gate Voltage Drain Current

VDS= -30V, VGS=0V,

-

-

-1

μA

IGSS

Gate to Body Leakage Current

VDS=0V, VGS= ±12V

-

-

±100

nA

VGS(th)

Gate Threshold Voltage

VDS= VGS, ID= -250μA

-0.5

-0.9

-1.5

V

RDS(on)

Static Drain-Source on-Resistance note2

VGS= -4.5V, ID= -3A

-

58

68

mΩ

VGS= -2.5V, ID= -1A

-

71

96

mΩ

Ciss

Input Capacitance

VDS= -15V, VGS=0V,

f=1.0MHz

-

553

-

pF

Coss

Output Capacitance

-

57

-

pF

Crss

Reverse Transfer Capacitance

-

35

-

pF

Qg

Total Gate Charge

VDS= -15V, ID= -3A,

VGS= -10V

-

6.5

-

nC

Qgs

Gate-Source Charge

-

1.4

-

nC

Qgd

Gate-Drain(“Miller”) Charge

-

1.7

-

nC

td(on)

Turn-on Delay Time

VDD=-15V, ID=-3A,

VGS=-10V,RGEN=2.5Ω

-

10

-

ns

tr

Turn-on Rise Time

-

86

-

ns

td(off)

Turn-off Delay Time

-

150

-

ns

tf

Turn-off Fall Time

-

357

-

ns

IS

Maximum Continuous Drain to Source Diode Forward Current

-

-

-4.2

A

ISM

Maximum Pulsed Drain to Source Diode Forward Current

-

-

-16.8

A

VSD

Drain to Source Diode Forward Voltage

VGS=0V, IS= -4.2A

-

-0.8

-1.2

V

Note :

1、The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3、The power dissipation is limited by 150℃ junction temperature

4、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.