AP3415LI

-20V P-Channel Enhancement Mode MOSFET

AP3415LI RVE1.0

永源微電子科技有限公司

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

V(BR)DSS

Drain-Source Breakdown Voltage

VGS=0V,ID= -250μA

-20

-22

-

V

IDSS

Zero Gate Voltage Drain Current

VDS = -20V, VGS = 0V,

-

-

-1

μA

IGSS

Gate to Body Leakage Current

VDS =0V, VGS = ±10V

-

-

±10

uA

VGS(th)

Gate Threshold Voltage

VDS= VGS, ID= -250μA

-0.4

-0.7

-1.0

V

RDS(on)

Static Drain-Source on-Resistance

VGS =-4.5V, ID =-4A

-

31

40

mΩ

VGS =-2.5V, ID =-3A

-

40

56

Ciss

Input Capacitance

VDS = -10V, VGS = 0V, f =

1.0MHz

-

289

-

pF

Coss

Output Capacitance

-

98

-

pF

Crss

Reverse Transfer Capacitance

-

22

-

pF

Qg

Total Gate Charge

VDS = -10V, ID = -4.1A,

VGS = -4.5V

-

9

-

nC

Qgs

Gate-Source Charge

-

1

-

nC

Qgd

Gate-Drain(“Miller”) Charge

-

2.6

-

nC

td(on)

Turn-on Delay Time

VDD = -10V, RG = 1Ω,

VGEN=-4.5V,RL=1.2Ω

-

12

-

ns

tr

Turn-on Rise Time

-

35

-

ns

td(off)

Turn-off Delay Time

-

30

-

ns

tf

Turn-off Fall Time

-

10

-

ns

IS

Maximum Continuous Drain to Source Diode Forward Current

-

-

-4.1

A

ISM

Maximum Pulsed Drain to Source Diode Forward Current

-

-

-16.4

A

VSD

Drain to Source Diode Forward Voltage

VGS = 0V, IS = -4.1A

-

-

-1.2

V

Note :

1、The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3、The power dissipation is limited by 150℃ junction temperature

4、The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation.