AP4407A

30V P-Channel Enhancement Mode MOSFET

AP4407A Rve1.2

永源微電子科技有限公司

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=-250uA

-30

---

---

V

△

BVDSS/△TJ

BVDSS Temperature Coefficient

Reference to 25℃ , ID=-1mA

---

-0.023

---

V/℃

RDS(ON)

Static Drain-Source On-Resistance2

VGS=-10V , ID=-10A

---

10

13

mΩ

VGS=-4.5V , ID=-10A

---

16

20

VGS(th)

Gate Threshold Voltage

VGS=VDS , ID =-250uA

-1.0

-1.6

-2.5

V

△

VGS(th)

VGS(th) Temperature Coefficient

---

4.6

---

mV/℃

IDSS

Drain-Source Leakage Current

VDS=-24V , VGS=0V , TJ=25℃

---

---

-1

uA

VDS=-24V , VGS=0V , TJ=55℃

---

---

-5

IGSS

Gate-Source Leakage Current

VGS=±20V , VDS=0V

---

---

±100

nA

gfs

Forward Transconductance

VDS=-5V , ID=-10A

---

24

---

S

Rg

Gate Resistance

VDS=0V , VGS=0V , f=1MHz

---

9

---

Ω

Qg

Total Gate Charge (-4.5V)

VDS=-15V , VGS=-4.5V , ID=-

10A

---

20

---

nC

Qgs

Gate-Source Charge

---

5.1

---

Qgd

Gate-Drain Charge

---

7.3

---

Td(on)

Turn-On Delay Time

VDD=-15V

,

VGS=-10V

,

RG=3.3

ID=-1A

---

33.8

---

ns

Tr

Rise Time

---

35.8

---

Td(off)

Turn-Off Delay Time

---

72.8

---

Tf

Fall Time

---

10.6

---

Ciss

Input Capacitance

VDS=-15V , VGS=0V , f=1MHz

---

2215

---

pF

Coss

Output Capacitance

---

310

---

Crss

Reverse Transfer Capacitance

---

237

---

IS

Continuous Source Current1,5

VG=VD=0V , Force Current

---

---

-11.5

A

ISM

Pulsed Source Current2,5

---

---

-46

A

VSD

Diode Forward Voltage2

VGS=0V , IS=-1A , TJ=25℃

---

---

-1

V

Note :

1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2.The data tested by pulsed , pulse width

≦ 300us , duty cycle ≦ 2%

3.The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.1mH,IAS=-50A

4.The power dissipation is limited by 150

℃ junction temperature

5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.