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AP9926C Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

Part # AP9926C
Description  20V NN-Channel Enhancement Mode MOSFET
PDF  7 Pages
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Manufacturer  APME [A POWER MICROELECTRONICS]
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AP9926C Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP9926C
20V N+N-Channel Enhancement Mode MOSFET
AP9926C RVE1.0
永源微電子科技有限公司
Description
The AP9926C uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS = 20V ID =4.2A
RDS(ON) < 50mΩ @ VGS=10V （Type：42mΩ）
Application
Battery protection
Load switch
Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP9926C
SOP-8L
AP9926C XXX YYYY
3000
Absolute Maximum Ratings (TC=25
℃unless otherwise noted)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
20
V
VGS
Gate-Source Voltage
±
12
V
ID@TA=25℃
Continuous Drain Current, VGS @ 4.5V1
4.2
A
ID@TA=70℃
Continuous Drain Current, VGS @ 4.5V1
2.8
A
IDM
Pulsed Drain Current2
16
A
PD@TA=25℃
Total Power Dissipation3
1
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
RθJA
Thermal Resistance Junction-ambient 1
125
℃
/W
RθJC
Thermal Resistance Junction-Case1
80
℃
/W


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