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APE65N04DF Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

Part # APE65N04DF
Description  40V N-Channel Enhancement Mode MOSFET
PDF  7 Pages
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Manufacturer  APME [A POWER MICROELECTRONICS]
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APE65N04DF Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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APE65N04DF
40V N-Channel Enhancement Mode MOSFET
APE65N04NF RVE1.0
永源微電子科技有限公司
Description
The APE65N04DF uses advanced APM-Trench III technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS = 40V ID =65A
RDS(ON) < 12mΩ @ VGS=10V (Type：8.0mΩ)
Application
Battery protection
Load switch
Uninterruptible power supply
Quality Assurance
AEC-Q101
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
APE65N04DF
PDFN3*3-8L
APE65N04DF XXX YYYY
5000
Absolute Maximum Ratings (TC=25
℃unless otherwise noted)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
40
V
VGS
Gate-Source Voltage
±20
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V1
65
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V1
28
A
IDM
Pulsed Drain Current2
180
A
EAS
Single Pulse Avalanche Energy3
81
mJ
IAS
Avalanche Current
10
A
PD@TC=25℃
Total Power Dissipation4
27.8
W
TSTG
Storage Temperature Range
-55 to 175
℃
TJ
Operating Junction Temperature Range
-55 to 175
℃
RθJA
Thermal Resistance Junction-Ambient 1
85
℃
/W
RθJC
Thermal Resistance Junction-Case1
4.5
℃
/W
AECQ101


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